TC1201 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1 / 6 low noise and medium power gaas fets features low noise figure: nf = 0.5 db typical at 12 ghz photo enlargement high associated gain: ga = 12 db typical at 12 ghz high dynamic range: 1 db compression power p -1 = 21.5 dbm at 12 ghz breakdown voltage: bv dgo 9 v lg = 0.25 m, wg = 300 m all-gold metallization for high reliability tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1201 is a gaas pseudomorphic high electron mo bility transistor (phemt) chip, which has very low noise figure, high associated gain and high dynamic range. the device can be used in circuits up to 30 ghz and suitable for low noise and medium power amplifier a pplications including a wide range of commercial an d military applications. all devices are 100% dc test ed to assure consistent quality. all bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. electrical specifications (t a =25 c) symbol conditions min typ max unit nf noise figure at v ds = 4 v, i ds = 25 ma , f = 12ghz 0.5 0.7 db g a associated gain at v ds = 4 v, i ds = 25 ma, f = 12ghz 10 12 db p 1db output power at 1db gain compression point , f = 12ghz v ds = 6 v, i ds = 40 ma 20.5 21.5 dbm g l linear power gain, f = 12ghz v ds = 6 v, i ds = 40 ma 11 12 db i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 90 ma g m transconductance at v ds = 2 v, v gs = 0 v 100 ms v p pinch-off voltage at v ds = 2 v, i d = 0.6 ma -1.0* volts bv dgo drain-gate breakdown voltage at i dgo =0.15 ma 9 12 volts r th thermal resistance 120 c/w note: * for the tight control of the pinch-off voltage . TC1201?s are divided into 3 groups: (1) TC1201p0710 : vp = -0.7v to -1.0v (2) TC1201p0811 : vp = -0.8v to -1.1v (3) TC1201p0912 : vp = -0.9v to -1.2v in addition, the customers may specify their requir ements. absolute maximum ratings (t a =25 c) typical noise parameters (t a =25 c) v ds = 4 v, i ds = 25 ma symbol parameter rating v ds drain-source voltage 7.0 v v gs gate-source voltage -3.0 v i ds drain current i dss i gs gate current 300 a p in rf input power, cw 21 dbm p t continuous dissipation 500 mw t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c opt frequency (ghz) nf opt (db) g a (db) mag ang rn/50 2 0.33 20.4 0.89 9 0.66 4 0.41 17.0 0.80 20 0.46 6 0.45 14.7 0.74 37 0.36 8 0.49 13.0 0.68 57 0.29 10 0.55 12.0 0.63 77 0.25 12 0.60 11.3 0.58 95 0.20 14 0.73 10.7 0.55 112 0.16 16 0.85 10.3 0.51 129 0.11 18 0.97 9.8 0.50 149 0.09
TC1201 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2 / 6 chip dimensions units: micrometers gate pad: 55 x 50 chip thickness: 100 drain pad: 55 x 50 source pad: 55 x 65 typical scattering parameters (t a =25 c ) v ds = 4 v, i ds = 25 ma d s s g d s g 430 12 250 12 0 1 . 0 1 . 0 - 1 . 0 1 0 . 0 1 0 . 0 - 1 0 . 0 5 . 0 5 . 0 - 5 . 0 2 . 0 2 . 0 - 2 . 0 3 . 0 3 . 0 - 3 . 0 4 . 0 4 . 0 - 4 . 0 0 . 2 0 . 2 - 0 . 2 0 . 4 0 . 4 - 0 . 4 0 . 6 0 . 6 - 0 . 6 0 . 8 0 . 8 - 0 . 8 swp max 18ghz swp min 2ghz s11 0 1 5 3 0 4 5 6 0 7 5 9 0 1 0 5 1 2 0 1 3 5 1 5 0 1 6 5 -180 - 1 6 5 - 1 5 0 - 1 3 5 - 1 2 0 - 1 0 5 -9 0 - 7 5 - 6 0 - 4 5 - 3 0 - 1 5 swp max 18 ghz swp min 2 ghz mag max 0.15 0.075 per div s12
TC1201 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3 / 6 frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.9554 -39.49 7.5329 151.36 0.0398 66.80 0.5775 - 25.69 3 0.9139 -56.54 6.9061 139.05 0.0548 57.21 0.5420 - 36.51 4 0.8723 -71.28 6.2454 128.40 0.0660 49.27 0.5059 - 45.66 5 0.8352 -83.83 5.6234 119.22 0.0743 42.80 0.4737 - 53.32 6 0.8042 -94.47 5.0697 111.25 0.0804 37.54 0.4471 - 59.75 7 0.7790 -103.50 4.5894 104.26 0.0849 33.23 0.4260 -65.20 8 0.7588 -111.21 4.1772 98.02 0.0883 29.68 0.4100 -69.87 9 0.7425 -117.84 3.8241 92.37 0.0909 26.70 0.3983 -73.94 10 0.7294 -123.59 3.5208 87.18 0.0930 24.17 0.3902 -77.53 11 0.7186 -128.61 3.2590 82.37 0.0947 22.01 0.3851 -80.74 12 0.7098 -133.04 3.0317 77.86 0.0960 20.13 0.3823 -83.64 13 0.7025 -136.97 2.8331 73.59 0.0972 18.48 0.3816 -86.29 14 0.6963 -140.48 2.6586 69.52 0.0982 17.01 0.3826 -88.74 15 0.6911 -143.65 2.5043 65.62 0.0991 15.70 0.3849 -91.01 16 0.6866 -146.51 2.3671 61.87 0.0999 14.51 0.3883 -93.14 17 0.6827 -149.13 2.2444 58.23 0.1006 13.43 0.3928 -95.14 18 0.6793 -151.52 2.1341 54.70 0.1013 12.44 0.3980 -97.05 * the data does not include gate, drain and source bond wires. typical scattering parameters (t a =25 c ) v ds = 6 v, i ds = 40 ma 0 1 5 3 0 4 5 6 0 7 5 9 0 1 0 5 1 2 0 1 3 5 1 5 0 1 6 5 -180 - 1 6 5 - 1 5 0 - 1 3 5 - 1 2 0 - 1 0 5 -9 0 - 7 5 - 6 0 - 4 5 - 3 0 - 1 5 swp max 18 ghz swp min 2 ghz mag max 8 2 per div s21 0 1 . 0 1 . 0 - 1 . 0 1 0 . 0 1 0 . 0 - 1 0 . 0 5 . 0 5 . 0 - 5 . 0 2 . 0 2 . 0 - 2 . 0 3 . 0 3 . 0 - 3 . 0 4 . 0 4 . 0 - 4 . 0 0 . 2 0 . 2 - 0 . 2 0 . 4 0 . 4 - 0 . 4 0 . 6 0 . 6 - 0 . 6 0 . 8 0 . 8 - 0 . 8 swp max 18ghz swp min 2ghz s22
TC1201 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 4 / 6 frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 2 0.9492 -42.63 8.1520 149.89 0.0332 65.82 0.5814 - 23.13 3 0.9040 -60.64 7.3895 137.28 0.0452 56.18 0.5443 - 32.47 4 0.8603 -75.94 6.6121 126.58 0.0539 48.42 0.5083 - 40.13 5 0.8229 -88.76 5.9016 117.51 0.0602 42.29 0.4777 - 46.43 6 0.7926 -99.48 5.2840 109.74 0.0648 37.45 0.4535 - 51.70 7 0.7685 -108.48 4.7585 102.97 0.0682 33.60 0.4353 -56.23 8 0.7495 -116.10 4.3141 96.97 0.0708 30.49 0.4222 - 60.23 9 0.7344 -122.61 3.9377 91.56 0.0728 27.95 0.4133 - 63.85 10 0.7224 -128.23 3.6174 86.61 0.0744 25.85 0.4077 -67.19 11 0.7126 -133.13 3.3430 82.03 0.0758 24.09 0.4048 -70.31 12 0.7046 -137.43 3.1063 77.73 0.0770 22.60 0.4040 -73.25 13 0.6979 -141.24 2.9006 73.66 0.0781 21.31 0.4049 -76.05 14 0.6923 -144.65 2.7207 69.79 0.0791 20.19 0.4072 -78.73 15 0.6875 -147.73 2.5622 66.07 0.0799 19.20 0.4106 -81.30 16 0.6833 -150.51 2.4219 62.49 0.0808 18.32 0.4149 -83.76 17 0.6797 -153.06 2.2969 59.03 0.0816 17.53 0.4199 -86.13 18 0.6764 -155.39 2.1849 55.66 0.0824 16.80 0.4255 -88.42 *the data does not include gate, drain and source b ond wires. small signal model, v ds = 4 v, i ds = 25 ma 0 1 . 0 1 . 0 - 1 . 0 1 0 . 0 1 0 . 0 - 1 0 . 0 5 . 0 5 . 0 - 5 . 0 2 . 0 2 . 0 - 2 . 0 3 . 0 3 . 0 - 3 . 0 4 . 0 4 . 0 - 4 . 0 0 . 2 0 . 2 - 0 . 2 0 . 4 0 . 4 - 0 . 4 0 . 6 0 . 6 - 0 . 6 0 . 8 0 . 8 - 0 . 8 swp max 18ghz swp min 2ghz s11 0 1 5 3 0 4 5 6 0 7 5 9 0 1 0 5 1 2 0 1 3 5 1 5 0 1 6 5 -180 - 1 6 5 - 1 5 0 - 1 3 5 - 1 2 0 - 1 0 5 -9 0 - 7 5 - 6 0 - 4 5 - 3 0 - 1 5 swp max 18 ghz swp min 2 ghz mag max 0.1 0.01 per div s12 0 1 5 3 0 4 5 6 0 7 5 9 0 1 0 5 1 2 0 1 3 5 1 5 0 1 6 5 -180 - 1 6 5 - 1 5 0 - 1 3 5 - 1 2 0 - 1 0 5 -9 0 - 7 5 - 6 0 - 4 5 - 3 0 - 1 5 swp max 18 ghz swp min 2 ghz mag max 9 3 per div s21 0 1 . 0 1 . 0 - 1 . 0 1 0 . 0 1 0 . 0 - 1 0 . 0 5 . 0 5 . 0 - 5 . 0 2 . 0 2 . 0 - 2 . 0 3 . 0 3 . 0 - 3 . 0 4 . 0 4 . 0 - 4 . 0 0 . 2 0 . 2 - 0 . 2 0 . 4 0 . 4 - 0 . 4 0 . 6 0 . 6 - 0 . 6 0 . 8 0 . 8 - 0 . 8 swp max 18ghz swp min 2ghz s22
TC1201 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 5 / 6 schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.028 nh rs 1.63 ohm rg 2.21 ohm ls 0.0005 nh cgs 0.425 pf cds 0.104 pf ri 5.95 ohm rds 172.8 ohm cgd 0.039 pf rd 0.898 ohm gm 123.1 ms ld 0.024 nh t 4.58 psec small signal model, v ds = 6 v, i ds = 40 ma schemati cgs cgd cds rg rd rds ri rs gm t lg ld ls parameters lg 0.028 nh rs 1.63 ohm rg 2.21 ohm ls 0.0005 nh cgs 0.52 pf cds 0.1 pf ri 7.12 ohm rds 173.9 ohm cgd 0.032 pf rd 0.898 ohm gm 136.8 ms ld 0.024 nh t 5.10 psec large signal model , v ds = 6 v, i ds = 40 ma
TC1201 rev5_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-s he shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 6 / 6 schematic tom2 model parameters parameters parameters vto -0.757 v vmax 0.5 v alpha 3.92 cgd 0.032 pf beta 0.161 cgs 1.7929 pf gamma 0.0509 cds 0.097 pf delta 0.3815 ris 7.121 ohm q 0.987 rid 0.001 ohm ng 0.1 vbr 9 v nd 0.01 rdb 173.9 ohm tau 5.098 ps cbs 0.0266 pf rg 2.205 ohm tnom 25 c rd 0.898 ohm ls 0.0005 nh rs 1.631 ohm lg 0.0278 nh is 1e-11 ma ld 0.0243 nh n 1 afac 1 vbi 1 v nfing 1 vdelta 0.2 v chip handling die attachment: conductive epoxy or eutectic die attach is recommen ded. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at st age temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompressi on bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 2 20 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electr ostatic discharge (esd) precautions should be obser ved at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v. cgs cgd cds rg rd rdb ris rs id lg ld ls cbs rid
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